Sushant Gadgil

  • San Francisco Bay Area, US

Undergraduate Researcher at University of California, Berkeley

Work experience

Work experience
Oct 2013 - Present

Undergraduate Research Assistant

University of California, Berkeley
Worked under Prof. Sayeef Salahuddin of the Electrical Engineering and Computer Science Department on the growth of complex oxide and sulfide thin films using Pulsed Laser Deposition and Atomic Layer Deposition. Used SEM, EDS, AFM, PFM, and XRD film characterization techniques to manufacture non-volatile memory devices.
Jun 2014 - Aug 2014

Process Engineering Summer Intern

Innova Dynamics
• Scaled-up roll-to-roll deposition of embedded silver nanowire (Innlay AgNW) thin-films for use in touch sensor applications. • Developed screen-printable chemical pastes to create optically indistinguishable non-conductive areas for touch screen patterning applications. • Characterized deposited AgNW films using HazeGuard optical, and four-point probe, and NAPSON electrical characterization techniques.
Jun 2012 - Sep 2012

Intern Mentor

Cleantech Open
Intern as a mentor to cleantech start ups as part of the Cleantech Open program. Specialize in business development as well as prototype development in mechanical engineering.
May 2009 - Jun 2012


Atomic Precision Systems Inc
Interned at a semiconductor company involved in processing technologies. Worked on component selection and integration, mechanical design (Autodesk Inventor), electro-mechanical test and integration, as well as acquired experience with vacuum hardware integration. Also acquired experience with National Instruments CompactRIO development and troubleshooting.


2013 - 2017

Bachelor of Science (B.S.) Chemical Engineering and Materials Science

University of California, Berkeley

Treasurer, UC Berkeley Chemical Engineering Car 2014-2015

Controls Lead, UC Berkeley Chemical Engineering Car 2013-2014

2009 - 2013

Bellarmine College Preparatory

4.34/4.0 GPA

National AP Scholar

National Merit Distinguished Scholar


Highly Crystalline MoS2 Thin Films By Pulsed Laser Deposition

Applied Physics Letters, 106, 052106

Highly crystalline thin films of MoS2 were prepared over large area by pulsed laser deposition down to a single monolayer on Al2O3 (0001), GaN (0001), and SiC-6H (0001) substrates. X-ray diffraction and selected area electron diffraction studies show that the films are quasi-epitaxial with good out-of-plane texture. In addition, the thin films were observed to be highly crystalline with rocking curve full width half maxima of 0.01°, smooth with a RMS roughness of 0.27 nm, and uniform in thickness based on Raman spectroscopy. From transport measurements, the as-grown films were found to be p-type.



Atomic Layer Deposition


Market Research


Public Speaking